BFR740L3RH_16 Datasheet, PDF (5/29 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFR740L3RH
List of Figures
List of Figures
Figure 6-1 Total Power Dissipation P_tot = f (T_S). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 7-1 BFR740L3RH Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 7-2 Collector Current vs. Collector Emitter Voltage I_C = f (V_CE), I_B = Parameter in µA . . . . . . . . . . . . . 17
Figure 7-3 DC Current Gain h_FE = f (I_C), V_CE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 7-4 Collector Current vs. Base Emitter Forward Voltage I_C = f (V_BE), V_CE = 2 V . . . . . . . . . . . . . . . . . 18
Figure 7-5 Base Current vs. Base Emitter Forward Voltage I_B = f (V_BE), V_CE = 2 V . . . . . . . . . . . . . . . . . . . . 18
Figure 7-6 Base Current vs. Base Emitter Reverse Voltage I_B = f (V_EB), V_CE = 2 V . . . . . . . . . . . . . . . . . . . . 19
Figure 7-7 Transition Frequency f_T = f (I_C), f = 2 GHz, V_CE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 7-8 3rd Order Intercept Point at output OIP₃ = f (I_C), Z_S = Z_L = 50 Ω, V_CE, f = Parameters . . . . . . . . . 20
Figure 7-9 3rd Order Intercept Point at output OIP₃ [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 5.5 GHz . . . . . . . 21
Figure 7-10 Compression Point at output OP_1dB [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 5.5 GHz . . . . . . . . . . 21
Figure 7-11 Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7-12 Gain G_ma,G_ms, |S₂₁|² = f (f), V_CE = 3 V, I_C = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7-13 Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 23
Figure 7-14 Maximum Power Gain G_max = f (V_CE), I_C = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 23
Figure 7-15 Input Matching S₁₁ = f (f), V_CE = 3 V, I_C = 6 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 7-16 Source Impedance for Minimum Noise Figure Z_opt = f (f), V_CE = 3 V, I_C = 6 / 15 mA . . . . . . . . . . . 24
Figure 7-17 Output Matching S₂₂ = f (f), V_CE = 3 V, I_C = 6 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 7-18 Noise Figure NF_min = f (f), V_CE = 3 V, I_C = 6 / 15 mA, Z_S = Z_opt . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 7-19 Noise Figure NF_min = f (I_C), V_CE = 3 V, Z_S = Z_opt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 26
Figure 7-20 Noise Figure NF₅₀ = f (I_C), V_CE = 3 V, Z_S = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 26
Figure 9-1 Package Outline of TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 9-2 Footprint of TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 9-3 Marking Layout of TSLP-3-9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 9-4 Tape of TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Data Sheet
5
Revision 2.1, 2016-03-16