BFR740L3RH_16 Datasheet, PDF (13/29 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFR740L3RH
Electrical Characteristics
Table 7-4 AC Characteristics, V_CE = 3 V, f = 0.45 GHz (cont’d)
Parameter
Symbol
Values
Min. Typ. Max.
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
NF_min
–
G_ass
–
OP_1dB
–
OIP₃
–
0.45 –
26.5 –
7
–
21
–
Unit Note / Test Condition
dB
dBm
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Data Sheet
13
Revision 2.1, 2016-03-16