BFR740L3RH_16 Datasheet, PDF (14/29 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFR740L3RH
Electrical Characteristics
Table 7-5 AC Characteristics, V_CE = 3 V, f = 0.9 GHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP₃
–
Values
Typ. Max.
28
–
27
–
0.45 –
25
–
8
–
22.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Table 7-6 AC Characteristics, V_CE = 3 V, f = 1.5 GHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP₃
–
Values
Typ. Max.
25.5 –
25
–
0.5 –
22.5 –
8
–
23
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Table 7-7 AC Characteristics, V_CE = 3 V, f = 1.9 GHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP₃
–
Values
Typ. Max.
24.5 –
23.5 –
0.5 –
21
–
8
–
23
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Data Sheet
14
Revision 2.1, 2016-03-16