BFR740L3RH_16 Datasheet, PDF (24/29 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFR740L3RH
Electrical Characteristics
0.5
0.4
0.3
0.2
12.0
12.0
0.1
0
0.1 0.2 0.3 0.4 0.5
−0.1
−0.2
−0.3
−0.4
−0.5
1
1.5
2
1 to 12 GHz
Step: 1GHz
1 1.5 2 3 4 5
1.0
−1
1.0
−2
−1.5
3
4
5
10
0.1
0.1 ^−10
−5
−4
−3
6.0mA
15.0mA
Figure 7-15 Input Matching S₁₁ = f (f), V_CE = 3 V, I_C = 6 / 15 mA
0.5
0.4
1
1.5
2
0.3
0.2
0.1
0
0.1
8.0
10.0 8.0
0.2 0.3 0.4 0.5
10.0
5.5
3.5
5.5 _3.521.4.9
1.5
1
1⁰⁰.^.5_.95
2.4
1.9
1.5
0.9
2 03.5 4 5
−0.1
12.0
12.0
3
4
5
10
−10
−0.2
−0.3
−0.4
−0.5
−5
−4
−3
−2
−1.5
−1
6mA
15mA
Figure 7-16 Source Impedance for Minimum Noise Figure Z_opt = f (f), V_CE = 3 V, I_C = 6 / 15 mA
Data Sheet
24
Revision 2.1, 2016-03-16