BFR740L3RH_16 Datasheet, PDF (11/29 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

7
Electrical Characteristics
BFR740L3RH
Electrical Characteristics
7.1
DC Characteristics
Table 7-1 DC Characteristics at T_A = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V_(BR)CEO
Min.
4
Collector emitter leakage current
I_CES
–
Collector base leakage current
Emitter base leakage current
DC current gain
I_CBO
–
I_EBO
–
h_FE
160
7.2
General AC Characteristics
Values
Typ. Max.
4.7 –
1
400
1
40
1
40
1
40
250 400
Unit Note / Test Condition
V
I_C = 1 mA, I_B = 0
Open base
nA V_CE = 13 V, V_BE = 0
V_CE = 5 V, V_BE = 0
E-B short circuited
nA V_CB = 5V, I_E = 0
Open emitter
nA V_EB = 0.5V, I_C = 0
Open collector
V_CE = 3 V, I_C = 25 mA
Pulse measured
Table 7-2 General AC Characteristics at T_A = 25 °C
Parameter
Symbol
Min.
Transition frequency
f_T
–
Collector base capacitance
C_CB
–
Collector emitter capacitance
C_CE
–
Emitter base capacitance
C_EB
–
Values
Typ. Max.
42
–
0.09 0.12
0.3 –
0.4 –
Unit Note / Test Condition
GHz
pF
pF
pF
V_CE = 3 V, I_C = 25 mA
f = 2 GHz
V_CB = 3 V, V_BE = 0
f = 1 MHz
Emitter grounded
V_CE = 3 V, V_BE = 0
f = 1 MHz
Base grounded
V_EB = 0.5 V,V_CB = 0
f = 1 MHz
Collector grounded
Data Sheet
11
Revision 2.1, 2016-03-16