BFR740L3RH_16 Datasheet, PDF (12/29 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFR740L3RH
7.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias-T´s in a 50 Ω system, T_A = 25 °C
Electrical Characteristics
3
VB
VC
GND
Bias -T
Bias -T
In
RF- ^RF-
Out
In Out
1
2
TSLP-3-9 testing circuit
Figure 7-1 BFR740L3RH Testing Circuit
Table 7-3 AC Characteristics, V_CE = 3 V, f = 150 MHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP₃
–
Values
Typ. Max.
35
–
29.5 –
0.45 –
27.5 –
3.5 –
21
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Table 7-4 AC Characteristics, V_CE = 3 V, f = 0.45 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
G_ms
–
|S₂₁|²
–
31
–
29
–
Unit Note / Test Condition
dB
I_C = 15 mA
I_C = 15 mA
Data Sheet
12
Revision 2.1, 2016-03-16