BFR740L3RH_16 Datasheet, PDF (16/29 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFR740L3RH
Electrical Characteristics
Table 7-11 AC Characteristics, V_CE = 3 V, f = 10 GHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ma
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
Values
Typ. Max.
13
–
9
–
1.3 –
8.5 –
9
–
24
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Table 7-12 AC Characteristics, V_CE = 3 V, f = 12 GHz
Parameter
Symbol
Min.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ma
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP₃
–
Values
Typ. Max.
11
–
7
–
1.5 –
7.5 –
6.5 –
20.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Note: OIP₃ value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
16
Revision 2.1, 2016-03-16