PTFA220121M Datasheet, PDF (6/19 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

Confidential, Limited Internal Distribution
Reference Circuit, 877 MHz
PTFA220121M
L1
22 nH
TL113
TL108
TL109
3
TL112
1
2
S2 ⁴
TL110
a 2 2 0 1 2 1 m− v 4 _ b d i n _ 8 7 7 M H z_ 0 2 − 2 3 − 2 0 1 0
R804
2000 Ohm
R805
10 Ohm S3
3
VDD
28 V
C801
1000 pF
R803
510 Ohm
C803
1000 pF
R801
1200 Ohm
R802
1300 Ohm
S5
8
In
1
Out
4 NC
2
3
NC
6 75
C802
1000 pF
2C
1
4
B
S
3E
S4
RF_IN
TL115
C101
68 pF
TL116
Er=3.48
H=20 mil
RO/RO4350B1
TL103
2
1
3
TL102
C103
10 pF
TL105
2
1
3
TL106
C104
16 pF
TL104
2
1
3
TL107
TL101
C102
20 pF
R102
10 Ohm
R101
1.3 Ohm
TL114
2
3
1
4
TL111
GATE DUT
DCVS
V1
Reference circuit input schematic for ƒ = 877 MHz
DRAIN DUT
C201
2200000 pF
TL209
TL222
TL204
TL205 TL203
3
a 2 2 0 1 2 1 m− v 4 _ b d o u t
_ 8 7 7 M H z_ 0 1 − 0 7 − 2 0 1 0
1
2
TL202 TL223
TL201
C202
68 pF
TL221
TL226
2
3
1
TL213
2
1
3
TL219
TL206
TL220
3
2
1
TL207
R1
0000 Ohm
TL212
VDD
28 V
TL217
TL216 TL214
3
2
1
TL215
L2
2.7 nH
TL218 TL208
1
2
3
C205
8.2 pF
TL211 TL210
1
2
3
C203
3.6 pF
TL224
C204
68 pF
TL225
RF_OUT
Reference circuit output schematic for ƒ = 877 MHz
Data Sheet
6 of 19
Rev. 07, 2010-04-15