PTFA220121M Datasheet, PDF (18/19 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

PTFA220121M
Confidential, Limited Internal Distribution
Package Outline Specifications
4.00
[.157]
4.00
[.157]
Package PG-SON-10
0.54
[.021] 2 PLACES
5X .320
[.0126] 2 PLACES
2.97
[.117]
2.37
[.093]
6 7 8 9 10
S
.815
[.0321]
1.42
[.056]
INDEX
MARKING
TOP VIEW
5X .515
[.0203] 2 PLACES
0.30
[.012]
SIDE VIEW
PG-SON-10_po_02-19-2010
0.38
[.015] BOTH SIDES
0.05 [.002]
5 4 3 21
4X 0.65
[.026] 2 PLACES
3.40
[.134]
BOTTOM VIEW
INDEX
MARKING
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.10 [.004] unless specified otherwise.
4. Package dimension: 4.00 mm x 4.00 mm x 1.42 mm.
5. Pins: S = source, 1 – 5 = gate, 6 – 10 = drain.
6. NiPdAu plating (gold top layer): 0.025 – 0.127 micron [1 – 5 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
18 of 19
Rev. 07, 2010-04-15