PTFA220121M Datasheet, PDF (10/19 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

PTFA220121M
Confidential, Limited Internal Distribution
Typical Performance, 2140 MHz (data taken in Infineon test fixture)
Two-carrier WCDMA 3GPP
V_DD = 28 V, I_DQ = 150 mA, ƒ = 2140 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
18
50
17
40
16
Gain
30
15
20
14
10
Efficiency
13
0
24 26 28 30 32 34 36 38
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 150 m A, ƒ = 2140 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
-10
40
-15
35
-20
Efficiency
-25
30
IMD Up
25
-30
20
-35
15
-40
IMD Low ¹⁰
-45
ACPR
5
-50
0
32 33 34 35 36 37 38
Output Power (dBm)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 150 mA,
ƒ₁ = 2139.05 MHz, ƒ₂ = 2140.05 MHz
-15
60
-20
50
-25
40
-30
Efficiency
30
-35
20
IMD3
-40
10
33 34 35 36 37 38 39 40 41 42 43
Output Power, PEP (dBm)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 150 mA,
ƒ₁ = 2139.05 MHz, ƒ₂ = 2140.05 MHz
18
50
17
Gain
40
16
30
15
Efficiency
20
14
36
37 38 39 40 41 42
Output Power, PEP (dBm)
10
43
Data Sheet
10 of 19
Rev. 07, 2010-04-15