PTFA220121M Datasheet, PDF (12/19 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

Confidential, Limited Internal Distribution
Typical Performance, 2140 MHz (cont.)
CW Performance
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 150 mA, ƒ = 2140 MHz
22
+85°C
+25°C
20 _{–30°C}
18
Gain
60
Efficiency
50
40
16
30
14
20
12
10
30 32 34 36 38 40 42 44
Output Power (dBm)
PTFA220121M
CW Performance
Gain & Eff. vs. Output Power & V_DD
I_DQ = 150 mA, ƒ = 2140 MHz
17.0
60
Gain
16.5
50
16.0 ^{VDD = 32 V}
40
V_DD = 28 V
V_DD = 24 V
15.5
30
15.0
14.5
30
Efficiency
32 34 36 38 40
Output Power (dBm)
20
10
42
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 150 mA, ƒ = 2140 MHz
17
55
16
Gain
45
15
35
14
Efficiency
25
13
15
32 33 34 35 36 37 38 39 40 41 42
Output Power (dBm)
Two-tone Gain vs. Output Power
V_DD = 28 V, ƒ₁ = 2139.05 MHz, ƒ₂ = 2140.05 MHz
17.5
I_DQ = 200 mA
17.0
16.5
I_DQ = 150 mA
16.0
I_DQ = 100 mA
15.5
15.0
35 36 37 38 39 40 41 42 43
Output Power (dBm)
Data Sheet
12 of 19
Rev. 07, 2010-04-15