PTFA220121M Datasheet, PDF (4/19 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

Confidential, Limited Internal Distribution
Typical Performance, 877 MHz (cont.)
Intermodulation Distortion
vs. Output Power
V_DD = 28 V, I_DQ = 150 mA,
ƒ₁ = 876.95 MHz, ƒ₂ = 877.05 MHz
-20
3rd Order
-30
5th
-40
-50
7th
-60
33 34 35 36 37 38 39 40 41 42
Output Power, PEP (dBm)
PTFA220121M
22
20
18
16
14
12
727
Small Signal CW
Gain & Input Return Loss
V_DD = 28 V, I_DQ = 150 mA
0
Gain
-5
-10
-15
IRL
-20
827
927
Frequency (MHz)
-25
1027
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0.15 A
0.30 A
0.60 A
0.75 A
0.90 A
1.05 A
1.20 A
0
20 40 60 80 100
Case Temperature (°C)
Data Sheet
4 of 19
Rev. 07, 2010-04-15