PTFA220121M Datasheet, PDF (1/19 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

PTFA220121M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor
12 W, 700 – 2200 MHz
Description
The PTFA220121M is an unmatched 12-watt LDMOS FET intended
for power amplifier applications in the 700 to 2200 MHz. This LDMOS
device offers excellent gain, efficiency and linearity performance in
a small overmolded plastic package.
PTFA220121M
Package PG-SON-10
Two-tone Drive-up
V_DD = 28 V, I_DQ = 150 mA,
ƒ₁ = 876.95 MHz, ƒ₂ = 877.05 MHz
-10
50
-15
45
-20
40
Efficiency
-25
35
-30
30
-35
25
-40
20
IMD3
-45
15
-50
10
33 34 35 36 37 38 39 40 41 42
Output Power, PEP (dBm)
Features
• Typical two-carrier WCDMA performance at 2140
MHz, 8 dB PAR
- P_OUT = 33 dBm Avg
- ACPR = –45.5 dBc
• Typical two-carrier WCDMA performance at 877
MHz, 8 dB PAR
- P_OUT = 33 dBm Avg
- ACPR = –44.5 dBc
• Typical CW performance, 2140 MHz, 28 V
- P_OUT = 41.6 dBm
- Efficiency = 53.5%
- Gain = 15.5 dB
• Typical CW performance, 877 MHz, 28 V
- P_OUT = 41.8 dBm
- Efficiency = 60%
- Gain = 19.9 dB
• Capable of handling 10:1 VSWR @ 28 V, 12 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 2 (minimum)
• Excellent thermal stability
• Pb-free and RoHS compliant
RF Characteristics
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 150 mA, P_OUT = 12 W PEP, ƒ = 877 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
20
20.5
η_D
41
42.5
IMD
—
–33
Max
—
—
–32
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 19
Rev. 07, 2010-04-15