PTFA220121M Datasheet, PDF (3/19 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

PTFA220121M
Confidential, Limited Internal Distribution
Typical Performance, 877 MHz (data taken in Infineon test fixture)
Two-carrier WCDMA 3GPP
V_DD = 28 V, I_DQ = 150 mA, ƒ = 877 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
23
60
22
50
Gain
21
40
20
30
19
18
29
Efficiency
31 33 35 37 39
Output Power (dBm)
20
10
41
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 150 mA, ƒ = 877 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
0
60
-5
55
IMD Up
-10
50
-15
-20
-25
-30 ^Efficiency
-35
-40
-45
-50
32 33 34 35
ACPR
36 37 38
45
40
35
30
IMD Low ²⁵
20
15
10
39 40 41
Output Power (dBm)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 150 mA,
ƒ₁ = 876.95 MHz, ƒ₂ = 877.05 MHz
22
50
Gain
21
40
20
30
19
Efficiency
20
18
10
33 34 35 36 37 38 39 40 41 42
Output Power, PEP (dBm)
CW Performance
Gain & Eff. vs. Output Power & V_DD
I_DQ = 150 mA, ƒ = 877 MHz
22.0
70
V_DD = 32 V
21.5 V_DD = 28 V
60
V_DD = 24 V
21.0
50
Gain
20.5
40
20.0
30
19.5
20
Efficiency
19.0
10
30 32 34 36 38 40 42 44
Output Power (dBm)
Data Sheet
3 of 19
Rev. 07, 2010-04-15