PTFA220121M Datasheet, PDF (2/19 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

PTFA220121M
Confidential, Limited Internal Distribution
RF Characteristics
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 150 mA, P_OUT = 9.3 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G_ps
η_D
IMD
Min Typ
—
16.2
—
37
— –29.4
Max
—
—
—
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 A
V_DS = 28 V, I_DQ = 150 mA
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
2.0
—
Typ
—
—
2.01
2.5
—
Max
—
1.0
—
3.0
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 12 W CW)
Symbol
V_DSS
V_GS
T_J
T_STG
R_θJC
Value
65
–0.5 to +12
175
–40 to +150
3.4
Unit
V
V
°C
°C
°C/W
Moisture Sensitivity Level
Level
3
Test Standard
IPC/JEDEC J-STD-020
Package Temperature Unit
260
°C
Ordering Information
Type and Version
Package Outline
PTFA220121M V4 V4 R250 PG-SON-10
Package Description
Molded plastic, SMD
Shipping
Tape & Reel, 500 pcs
Data Sheet
2 of 19
*See Infineon distributor for future availability.
Rev. 07, 2010-04-15