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HYE25L256160AC Datasheet, PDF (5/55 Pages) Infineon Technologies AG – 256-Mbit Mobile-RAM | |||
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HYE25L256160AC
256-Mbit Mobile-RAM
Overview
interleave fashion allows random access operation to occur at higher rate. A sequential and gapless data rate is
possible depending on burst length, CAS latency and speed grade of the device.
The Mobile-RAM is housed in a FBGA âchip-sizeâ package. The Mobile-RAM is available in the extended (â25 °C
to +85 °C) temperature range.
Table 2 Ordering Information
Part Number1)
Function Code
HYE25L256160ACâ7.5
PC133â333â522
HYE25L256160ACâ8
PC100â222â620
Case Temperature Range
extended (â25 °C to +85 °C)
1) HYB/E: designator for memory components for commercial/extended temperature range
25L: Mobile-RAM at VDD = 2.5 V
256: 256-Mbit density
160: Product variation x16
A: Die revision A
C: Package type FBGA
â7.5/8: speed grade - see Table 1
Package
P-TFBGA-54
Data Sheet
5
V1.1, 2003-04-16
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