HYE25L256160AC Datasheet, PDF (31/55 Pages) Infineon Technologies AG – 256-Mbit Mobile-RAM

Burst Write and Read with Auto Precharge
(Burst Length = 2, CAS latency = 2, 3 )
HYE25L256160AC
256-Mbit Mobile-RAM
Timing Diagrams
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
CAS Latency = 2:
C om m and
Bank A
A c tiv e
D Q 's
CAS Latency = 3:
Com m and
Bank A
A ctive
D Q 's
NOP
W rite A
Auto Precharge
NOP
NOP
t_WR
DIN A0 DIN A1
NOP
*
NOP
t_RP
A ctivate
NOP
NOP
NOP
W rite A
Auto Precharge
NOP
NOP
t_WR
DIN A0 DIN A1
NOP
*
NOP
t_RP
NOP
A c tiv a te
* ^{Begin Auto Precharge}
Bank can be reactivated after trp
SPT03909_2
Figure 14 Burst Write with Auto-Precharge
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Command
Read A
with AP
CAS
latency = 2
DQ 's
CAS
latency = 3
DQ 's
NOP
NOP NOP NOP NOP NOP
*
t_RP
DOUT A0 DOUT A1 DOUT A2 DOUT A3
NOP
*
t_RP
DOUT A0 DOUT A1 DOUT A2 DOUT A3
* ^{Begin Auto Precharge}
Bank can be reactivated after trp
NOP
SPT03721_2
Figure 15 Burst Read with Auto-Precharge
Data Sheet
31
V1.1, 2003-04-16