HYE25L256160AC Datasheet, PDF (47/55 Pages) Infineon Technologies AG – 256-Mbit Mobile-RAM

Random Row Read (Interleaving Banks) with Precharge
HYE25L256160AC
256-Mbit Mobile-RAM
Timing Diagrams
Burst Length = 8, CAS Latency = 2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t _CK2
C KE ^{H igh}
CS
RAS
CAS
WE
BS
AP
RBx
RAx
RBy
Addr.
DQM
RBx
CBx
t _RCD
H i-Z
DQ
RAx
CAx
RBy
CBy
t _RP
t _AC2
Bx0 Bx1 Bx2 Bx3 Bx4 Bx5 Bx6 Bx7 Ax0 Ax1 Ax2 Ax3 Ax4 Ax5 Ax6 Ax7
By0 By1
Activate Read
Command Command
Bank B Bank B
Figure 31 CAS Latency = 2
A c tiv a te
Com m and
Bank A
Precharge Activate
Command Command
Bank B Bank B
Read
Command
Bank A
Read
Com m and
Bank B
SPT03925_2
Data Sheet
47
V1.1, 2003-04-16