HYE25L256160AC Datasheet, PDF (32/55 Pages) Infineon Technologies AG – 256-Mbit Mobile-RAM

AC Parameters
HYE25L256160AC
256-Mbit Mobile-RAM
Timing Diagrams
Burst Length = 4, CAS Latency = 2
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
t _CH
t _CL
t _CK2
CKE
t _CKS
t _CS
t _CH
Begin Auto
Begin Auto
t _CKH
P recha rg e
Precharge
Bank A
Bank B
CS
RAS
CAS
WE
BS
AP
A dd r.
t _AH
RAx
RBx
t _AS
RAx
CAx
RBx
CBx
RAy
RAy
RAy
RAz
RBy
RAz
RBy
DQM
H i-Z
DQ
t _RCD
t _WR
t _RP
t _DS
t _RC
Ax0 Ax1 Ax2 Ax3 Bx0 Bx1 Bx2 Bx3
t _DH
t _WR
Ay0 Ay1 Ay2 Ay3
t _RP ^t _RRD
A c tiv a te
C om m and
Bank A
A c tiv a te
C om m and
Bank B
W rite with
Auto Precharge
Command
Bank A
W rite with
Auto Precharge
C om m and
Bank B
Activate W rite
Command Command
Bank A Bank A
Figure 16 AC Parameters for a Write Timing
Precharge Activate Activate
Command Command Command
Bank A Bank A Bank B
SPT03910_2
Data Sheet
32
V1.1, 2003-04-16