HYE25L256160AC Datasheet, PDF (28/55 Pages) Infineon Technologies AG – 256-Mbit Mobile-RAM

HYE25L256160AC
256-Mbit Mobile-RAM
Timing Diagrams
(Burst Length = 4, CAS latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
DQM
Command NOP
CAS
latency = 2
t _CK2, DQ’s
t _DQW
t _DQZ
1 Clk Interval
NOP
Bank A
Activate
NOP Read A Write A NOP
NOP
NOP
Must be Hi-Z before
the Write Command
DIN A0
DIN A1
DIN A2
DIN A3
"H" or "L"
SPT03939
Figure 9 Minimum Read to Write Interval
Data Sheet
28
V1.1, 2003-04-16