PTFA220121M_15 Datasheet, PDF (3/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz

PTFA220121M
Typical Performance, 877 MHz (data taken in a production test fixture)
Two-carrier WCDMA 3GPP
V_DD = 28 V, I_DQ = 150 mA, ƒ = 877 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
23
60
22
50
Gain
21
40
20
30
19
18
29
Efficiency
31
33
35
37
39
Output Power (dBm)
20
10
41
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 150 mA, ƒ = 877 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
0
-5
-10
-15
-20
-25
Efficiency
-30
-35
-40
-45
-50
32 33 34 35
60
55
IMD Up
50
45
40
35
30
IMD Low ²⁵
20
ACPR
15
10
36 37 38 39 40 41
Output Power (dBm)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 150 mA,
ƒ₁ = 876.95 MHz, ƒ₂ = 877.05 MHz
22
50
Gain
21
40
20
30
19
Efficiency
20
18
10
33 34 35 36 37 38 39 40 41 42
Output Power, PEP (dBm)
Intermodulation Distortion
vs. Output Power
V_DD = 28 V, I_DQ = 150 mA,
ƒ₁ = 876.95 MHz, ƒ₂ = 877.05 MHz
-20
3rd Order
-30
-40
5th
-50
7th
-60
33 34 35 36 37 38 39 40 41 42
Output Power, PEP (dBm)
Data Sheet
3 of 21
Rev. 10, 2015-10-23