PTFA220121M_15 Datasheet, PDF (20/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz

PTFA220121M
Package Outline Specifications
Package PG-SON-10

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Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.1 [.004].
4. Package dimension: 4.00 mm x 4.00 mm x 1.42 mm.
5. Pins: S = source, 1 – 5 = gate, 6 – 10 = drain.
6. NiPdAu plating (gold top layer): 0.025 – 0.127 micron [1 – 5 microinch].
(Find the latest and most complete information about products and packaging at the Infineon Internet page
(http://www.infineon.com/rfpower)
Data Sheet
20 of 21
Rev. 10, 2015-10-23