PTFA220121M_15 Datasheet, PDF (11/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz

PTFA220121M
Typical Performance, 1805 MHz
Pulsed CW Performance
V_DD = 28 V, I_DQ = 130 mA
20
1785 MHz
19
1795 MHz
1805 MHz
18
17
Gain
16
15
14
25
Efficiency
29
33
37
41
Output Power (dBm)
60
50
40
30
20
10
0
45
Output Power and Efficiency
v. Input Power
V_DD = 28 V, I_DQ = 130 mA
45
80
70
1785 MHz
40
1795 MHz
60
1805 MHz
50
35
Output Power
40
Efficiency 30
30
20
10
25
5
0
10
15
20
25
30
Input Power (W)
RF Characteristics
Pulsed CW Performance (not subject to production test – verified by design / characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 130 mA, P_OUT = 42 W P_1dB, ƒ = 1805 MHz
16 µs pulse width, 10% duty cycle, class AB test
Characteristic
Gain
Drain Efficiency
Symbol
Min
Typ
Max Unit
G_ps
—
17
—
dB
D
—
52
—
%
Data Sheet
11 of 21
Rev. 10, 2015-10-23