PTFA220121M_15 Datasheet, PDF (2/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz

PTFA220121M
RF Characteristics (cont.)
Two-tone Measurements (not subject to production test – verified by design / characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 150 mA, P_OUT = 9.3 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G_ps
D
IMD
Min
Typ
Max Unit
—
16.2
—
dB
—
37
—
%
—
–29.4
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 µA
V_(BR)DSS
65
—
—
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—
1.0
On-State Resistance
V_GS = 10 V, V_DS = 0.1 A
R_DS(on)
—
2.01
—
Operating Gate Voltage
V_DS = 28 V, I_DQ = 150 mA
V_GS
2.0
2.5
3.0
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
1.0
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 12 W CW)
Symbol
V_DSS
V_GS
T_J
T_STG
R_JC
Value
65
–0.5 to +12
175
–40 to +150
3.4
Moisture Sensitivity Level
Level
3
Test Standard
IPC/JEDEC J-STD-020
Package Temperature
Unit
260
°C
Unit
V
µA

V
µA
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFA220121M V4 R1K
Order Code
PTFA220121MV4R1KV4XUMA1
Package and Description
PG-SON-10, Molded plastic, SMD
Shipping
Tape & Reel, 1,000 pcs
Data Sheet
2 of 21
Rev. 10, 2015-10-23