PTFA220121M_15 Datasheet, PDF (14/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz

Typical Performance, 2140 MHz (cont.)
CW Performance
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 150 mA, ƒ = 2140 MHz
22
60
+ 85 ° C
20
+25° C
Efficiency
50
–30°C
18
Gain
40
16
30
14
20
12
10
30 32 34 36 38 40 42 44
Output Power (dBm)
Two-tone Gain vs. Output Power
V_DD = 28 V, ƒ₁ = 2139.05 MHz, ƒ₂ = 2140.05 MHz
17.5
17.0
I_DQ = 200 mA
16.5
I_DQ = 150 mA
16.0
I_DQ = 100 mA
15.5
15.0
35 36 37 38 39 40 41 42 43
Output Power (dBm)
PTFA220121M
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 150 mA, ƒ = 2140 MHz
17
55
16
Gain
45
15
35
14
Efficiency
25
13
15
32 33 34 35 36 37 38 39 40 41 42
Output Power (dBm)
Data Sheet
14 of 21
Rev. 10, 2015-10-23