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PTFA220121M_15 Datasheet, PDF (1/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz | |||
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PTFA220121M
High Power RF LDMOS Field Effect Transistor
12 W, 28 V, 700 â 2200 MHz
Description
The PTFA220121M is an unmatched 12-watt LDMOS FET intended
for power ampliï¬er applications in the 700 to 2200 MHz. This LDMOS
device offers excellent gain, efï¬ciency and linearity performance in a
small overmolded plastic package.
PTFA220121M
Package PG-SON-10
Two-tone Drive-up
VDD = 28 V, IDQ = 150 mA,
Æ1 = 876.95 MHz, Æ2 = 877.05 MHz
-10
50
-15
45
Efficiency
-20
40
-25
35
-30
30
-35
IMD3
25
-40
20
-45
15
-50
10
33 34 35 36 37 38 39 40 41 42
Output Power, PEP (dBm)
Features
⢠Typical two-carrier WCDMA performance at
2140 MHz, 8 dB PAR
- POUT = 33 dBm Avg
- ACPR = â45.5 dBc
⢠Typical two-carrier WCDMA performance at
877 MHz, 8 dB PAR
- POUT = 33 dBm Avg
- ACPR = â44.5 dBc
⢠Typical CW performance, 2140 MHz, 28 V
- POUT = 41.6 dBm
- Efï¬ciency = 53.5%
- Gain = 15.5 dB
⢠Typical CW performance, 877 MHz, 28 V
- POUT = 41.8 dBm
- Efï¬ciency = 60%
- Gain = 19.9 dB
⢠Capable of handling 10:1 VSWR @ 28 V, 12 W
(CW) output power
⢠Integrated ESD protection
⢠Excellent thermal stability
⢠Pb-free and RoHS compliant
RF Characteristics
Two-tone Measurements (not subject to production test â veriï¬ed by design / characterization in Inï¬neon test ï¬xture)
VDD = 28 V, IDQ = 150 mA, POUT = 12 W PEP, Æ = 877 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Min
Typ
Max Unit
Gps
20
20.5
â
dB
ï¨D
41
42.5
â
%
IMD
â
â33
â32
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive deviceâobserve handling precautions!
Data Sheet
1 of 21
Rev. 10, 2015-10-23
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