PTFA220121M_15 Datasheet, PDF (12/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz

Typical Performance, 2140 MHz
Two-carrier WCDMA 3GPP
V_DD = 28 V, I_DQ = 150 mA, ƒ = 2140 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
18
50
17
40
Gain
16
30
15
20
14
10
Efficiency
13
0
24 26 28 30 32 34 36 38
Output Power (dBm)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 150 mA,
ƒ₁ = 2139.05 MHz, ƒ₂ = 2140.05 MHz
-15
60
-20
50
-25
40
-30
30
Efficiency
-35
20
IMD3
-40
10
33 34 35 36 37 38 39 40 41 42 43
Output Power, PEP (dBm)
PTFA220121M
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 150 mA, ƒ = 2140 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
-10
40
-15
35
-20
-25
Efficiency
30
IMD Up
25
-30
20
-35
15
-40
-45
-50
32
IMD Low
10
ACPR
5
0
33
34
35
36
37
38
Output Power (dBm)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 150 mA,
ƒ₁ = 2139.05 MHz, ƒ₂ = 2140.05 MHz
18
50
17
40
Gain
16
30
Efficiency
15
20
14
36
37 38 39 40 41 42
Output Power, PEP (dBm)
10
43
Data Sheet
12 of 21
Rev. 10, 2015-10-23