PTFA220121M_15 Datasheet, PDF (13/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz

Typical Performance, 2140 MHz (cont.)
Two-tone Broadband
Gain, Efficiency & RL vs. Frequency
V_DD = 28V, I_DQ = 150 mA, Avg. PEP = 12 W,
tone pacing = 100 kHz
70
5
60
-5
RL
50
Efficiency ^-15
40
-25
30
IMD3
-35
20
Gain
-45
10
2040
2080
2120 2160 2200
Frequency (MHz)
-55
2240
Intermodulation Distortion
vs. Output Power
V_DD = 28 V, I_DQ = 150 mA,
ƒ₁ = 2139.05 MHz, ƒ₂ = 2140.05 MHz
-10
-20
-30
3rd Order
-40
5th
-50
7th
-60
33 34 35 36 37 38 39 40 41 42 43
Output Power, PEP (dBm)
PTFA220121M
Small Signal CW
Gain & Input Return Loss
V_DD = 28 V, I_DQ = 150 mA
20
18
16
14
12
10
1990
Gain
IRL
2090
2190
Frequency (MHz)
0
-4
-8
-12
-16
-20
2290
Intermodulation Distortion
vs. Tone Spacing
V_DD = 28 V, I_DQ = 150 mA, ƒ = 2140 MHz,
PEP = 11.22 W
-25
-30
3rd Order
-35
-40
5th
-45
7th
-50
-55
0
20
40
60
80
100
Tone Spacing (MHz)
Data Sheet
13 of 21
Rev. 10, 2015-10-23