HYB39S64160BT-8 Datasheet, PDF (28/53 Pages) Infineon Technologies AG – 64-MBit Synchronous DRAM

7. Burst Write and Read with Auto Precharge
7.1 Burst Write with Auto-Precharge
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
CLK
T0
T1
T2
T3
T4
T5
T6
T7
T8
COMMAND
BANK A
ACTIVE
NOP
CAS latency = 2
DQ’s
CAS latency = 3
DQ’s
NOP
WRITE A
Auto-Precharge
DIN A0
DIN A0
NOP
NOP
t_WR
DIN A1
t_WR
DIN A1
NOP
NOP
t_RP
*
t_RP
*
NOP
* ^{Begin Autoprecharge}
Bank can be reactivated after trp
7.2 Burst Read with Auto-Precharge
(Burst Length = 4, CAS latency = 2,3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COMMAND ^{READ A}
with AP
CAS latency = 2
t_CK2, DQ’s
CAS latency = 3
t_CK3, DQ’s
NOP
NOP
DOUT A0
NOP
NOP
NOP
NOP
DOUT A1
DOUT A0
DOUT A2
DOUT A1
*
t_RP
DOUT A3
* ^tRP
DOUT A2
DOUT A3
NOP
NOP
* ^{Begin Autoprecharge}
Bank can be reactivated after trp
Semiconductor Group
27