HYB39S64160BT-8 Datasheet, PDF (26/53 Pages) Infineon Technologies AG – 64-MBit Synchronous DRAM

5. Burst Write Operation
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Command NOP Write A NOP NOP NOP NOP NOP NOP NOP
DQ’s
DIN A0 DIN A1 DIN A2 DIN A3 don’t care
The first data element and the Write
are registered on the same clock edge.
Extra data is ignored after
termination of a Burst.
SPT03790
Semiconductor Group
25