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HYB25D256800BT Datasheet, PDF (27/29 Pages) Infineon Technologies AG – 256MBit Double Data Rata SDRAM
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HYB25D256[800/160]BT(L)-[5/5A]
256MBit Double Data Rata SDRAM
Preliminary DDR400 Data Sheet Addendum
Electrical Characteristics & AC Timing - Absolute Specifications
(0 °C £ TA £ 70 °C; VDDQ = 2.6V ± 0.1V; VDD = 2.6V ± 0.1V) (Part 1 of 2)
Symbol
Parameter
DDR400A
-5A
Min. Max.
DDR400B
-5
Min. Max.
Unit Notes
tAC DQ output access time from CK/CK
tDQSCK DQS output access time from CK/CK
tCH CK high-level width
tCL CK low-level width
tHP Clock Half Period
tCK
CL = 3.0
tCK Clock cycle time
CL = 2.5
tCK
CL = 2.0
tDH DQ and DM input hold time
tDS DQ and DM input setup time
tIPW Control & Addr. input pulse width (each input)
tDIPW DQ and DM input pulse width (each input)
tHZ Data-out high-impedence time from CK/CK
tLZ Data-out low-impedence time from CK/CK
tDQSS
Write command to 1st DQS latching
transition
-0.5
+0.5
-0.55 +0.55
0.45 0.55
0.45 0.55
min (tCL, tCH)
5
10
5
10
7.5
10
0.40
0.40
2.2
1.75
+0.65
-0.65 +0.65
0.72 1.28
-0.5
+0.5
-0.55 +0.55
0.45
0.55
0.45
0.55
min (tCL, tCH)
5
10
6
10
7.5
10
0.40
0.40
2.2
1.75
+0.65
-0.65 +0.65
ns 1-4
ns 1-4
tCK 1-4
tCK 1-4
ns 1-4
ns 1-4
ns 1-4
ns 1-4
ns 1-4
ns 1-4
ns 1-4,10
ns 1-4, 10
ns 1-4, 5
ns 1-4, 5
0.72
1.28 tCK 1-4
tDQSQ
DQS-DQ skew
(DQS & associated DQ signals)
+0.4
+0.4 ns 1-4
tQHS Data hold skew factor
tQH DQ output hold time from DQS
tDQSL,H DQS input low (high) pulse width (write cycle)
tDSS DQS falling edge to CK setup time (write cycle)
tDSH DQS falling edge hold time from CK (write cycle)
tMRD Mode register set command cycle time
tWPRES Write preamble setup time
tWPST Write postamble
tWPRE Write preamble
tIS
Address and control input setup
time
fast slew rate
tHP-tQHS
0.35
0.2
0.2
2
0
0.40
0.25
0.6
tIH
Address and control input hold
time
fast slew rate
0.6
+0.5
0.60
tHP-tQHS
0.35
0.2
0.2
2
0
0.40
0.25
0.6
0.6
+0.5
0.60
ns 1-4
ns 1-4
tCK 1-4
tCK 1-4
tCK 1-4
tCK 1-4
ns 1-4, 7
tCK 1-4, 6
tCK 1-4
ns
2-4,
10,11
ns
tRPRE
tRPST
tRAS
tRC
tRFC
Read preamble
Read postamble
Active to Precharge command
Active to Active/Auto-refresh command period
Auto-refresh to Active/Auto-refresh command
period
0.9
0.40
40
55
65
1.1
0.60
70,000
0.9
0.40
40
55
65
1.1 tCK 1-4
0.60 tCK 1-4
70,000 ns 1-4
ns 1-4
ns 1-4
2003-01-10, V0.9
Page 27 of 29
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