TLE8262E Datasheet, PDF (16/93 Pages) Infineon Technologies AG – Universal System Basis Chip HERMES Rev. 1.0

TLE8262E
General Product Characteristics
5
General Product Characteristics
5.1
Absolute Maximum Ratings
Absolute Maximum Ratings ¹⁾
T_j = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values Unit Test Conditions
Min.
Max.
Voltages
5.1.1 Supply Voltage
V_S
-0.3
40
5.1.2 Supply Voltage Slew Rate
dV_S/dt
-0.5
5
5.1.3 Regulator Output Voltage
V_cc1µC/2/3 -0.3
5.5
5.1.4 CAN Bus Voltage (CANH, CANL)
V_CANH/L -27
40
5.1.5 Differential Voltage CANH, CANL, SPLIT V_diffESD -40
40
V–
V/µs –
V–
V–
V CANH-CANL<|40 V|;
CANH-SPLIT<|40 V|
CANL-SPLIT<|40 V|;
5.1.6 Input Voltage at V_CCHSCAN
5.1.7 Voltage at SPLIT, WK
5.1.8 Voltage at Test
5.1.9 Voltage at V_cc3base, V_cc3shunt, V_cc3REF
5.1.10 Voltage at Limp Home (LH, pin)
5.1.11 Logic Voltages Input Pin (SDI, CLK,
CSN, TxDLINx, TxDCAN)
5.1.12 Logic Voltage Output PIN (SDO, RO,
INT, RxDLINx, RxDCAN)
5.1.13 LIN Line Bus Input Voltages
Currents
V_CCHSCAN
V_SPLIT
V_Test,max
V_cc3base
V_LH
V_I
-0.3
-27
-0.3
-0.3
-0.3
-0.3
V_DRI,RD -0.3
V_bus
-27
5.5
V
40
V
40
V
40
V
40
V
V_CC1µC + V
0.3V
V_CC1µC + V
0.3V
40
V
–
–
–
–
–
0 V < V_S < 28 V
0 V < V_CC1µC < 5.5 V
0 V < V_S < 28 V
0 V < V_CC1µC < 5.5 V
–
5.1.14 Reverse current on pin Vs
Temperatures
I_VS
-500
–
mA V_S < V_CC
5.1.15 Junction Temperature
5.1.16 Storage Temperature
ESD Susceptibility
T_j
-40
150
T_stg
-55
150
5.1.17 Electrostatic Discharge Voltage at BusX, V_ESD
-6
6
CANH, CANL, SPLIT versus GND
5.1.18 Electrostatic Discharge Voltage
V_ESD
-2
2
5.1.19 Electrostatic Discharge CDM
Corner Pins (Pin 1, 18, 19, 36)
V_{ESD_CDM} -750
_C
750
Electrostatic Discharge CDM
V_{ESD_CDM} -500
500
1) Not subject to production test; specified by design
2) ESD susceptibility Human Body Model “HBM” according to JESD22-A114
3) ESD susceptibility Charged Device Model “CDM” according to ESDA STM5.3.1
°C –
°C –
kV ²⁾ HBM (100 pF via
1.5 kΩ)
kV ²⁾ HBM (100 pF via
1.5 kΩ)
V
3)
V
3)
Data Sheet
16
Rev. 1.0, 2009-03-31