HYS64D16020GD Datasheet, PDF (15/22 Pages) Infineon Technologies AG – Unbuffered DDR SDRAM SO Modules

HYS64D16020GD(L)-[7/8]-A
Unbuffered DDR SDRAM SO Modules
Electrical Characteristics
Table 9
I_DD Specification and Conditions -8/-7
Unit
Note ¹⁾²⁾
128MB
×64
–8
–7
Symbol
max.
max.
I_DD0
480
540
mA
3)
I_DD1
540
620
mA
3)4)
I_DD2P
36
40
mA
5)
I_DD2F
280
360
mA
5)
I_DD2Q
280
360
mA
5)
I_DD3P
120
120
mA
5)
I_DD3N
280
360
mA
5)
I_DD4R
500
620
mA
3)4)
I_DD4W
520
620
mA
3)
I_DD5
860
940
mA
3)
I_DD6
12
12
mA
5)
I_DD7
1220
1300
mA
3)4)
1) Module I_DD values are calculated on the basis of component I_DD and can be measured differently according to DQ loading
capacity.
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the I_DDx values of the component data sheet as follows:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank modules
4) DQ I/O (I_DDQ) currents are not included in the calculations (see note 1)
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
Data Sheet
15
Rev. 1.02, 2004-01
11042003-YIV7-VK6M