HYS64D16020GD Datasheet, PDF (12/22 Pages) Infineon Technologies AG – Unbuffered DDR SDRAM SO Modules

HYS64D16020GD(L)-[7/8]-A
Unbuffered DDR SDRAM SO Modules
Electrical Characteristics
3
Electrical Characteristics
3.1
Operating Conditions
Table 6 Absolute Maximum Ratings
Parameter
Voltage on I/O pins relative to V_SS
Voltage on inputs relative to V_SS
Voltage on V_DD supply relative to V_SS
Voltage on V_DDQ supply relative to V_SS
Operating temperature (ambient)
Storage temperature (plastic)
Power dissipation (per SDRAM component)
Short circuit output current
Symbol
V_IN, V_OUT
min.
–0.5
V_IN
V_DD
V_DDQ
T_A
T_STG
P_D
I_OUT
–0.5
–0.5
–0.5
0
-55
–
–
Values
typ.
max.
–
V_DDQ +
0.5
–
+3.6
–
+3.6
–
+3.6
–
+70
–
+150
2.0
–
50
–
Unit Note/ Test
Condition
V–
V–
V–
V–
°C –
°C –
W–
mA –
Attention: Permanent damage to the device may occur if “Absolute Maximum Ratings” are exceeded. This
is a stress rating only, and functional operation should be restricted to recommended operation
conditions. Exposure to absolute maximum rating conditions for extended periods of time may
affect device reliability and exceeding only one of the values may cause irreversible damage to
the integrated circuit.
Data Sheet
12
Rev. 1.02, 2004-01
11042003-YIV7-VK6M