TLE8209-2 Datasheet, PDF (14/41 Pages) Infineon Technologies AG – SPI Programmable H-Bridge

TLE8209-2
Logic Inputs and Outputs
Electrical Characteristics: Control Inputs (cont’d)
V_S = 5 V to 28 V; V_DD = 5.0 V; T_j = -40 ⋅C to 150 ⋅C, all voltages with respect to ground, positive current flowing
into pin (unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Test Conditions
Min.
Typ. Max.
SCK
6.0.27
6.0.28
6.0.29
6.0.30
6.0.31
SS/SF
Low level
V_{SCK_L}
-0.3
High level
V_{SCK_H}
2.0
Hysteresis
V_{SCK_HYS} 0.2
Input Current (Pull Up) I_SCK
-30
Input Capacity¹⁾
C_SCK
–
–
1.0
V–
–
V_DD+0.3 V
–
–
1.0
V–
-20 -10
–
14
µA 0 V < V_SCK < 2.1 V
pF ²⁾
6.0.32
6.0.33
6.0.34
6.0.35
6.0.36
6.0.37
6.0.38
6.0.39
6.0.40
SO
Low level
High level
Hysteresis
Input Current in SPI
mode (Pull Up)
Input Current in SF
mode (Open Drain)
Input Capacity¹⁾
V_{SS_L}
V_{SS_H}
V_{SS_HYS}
I_SS
-0.3
2.0
0.2
-30
-30
0
I_SF
0
300
C_SS
–
–
1.0
V–
–
V_DD+0.3 V
–
–
1.0
V–
-20 -10
–
5
2
5
2
5
–
–
–
15
µA 0 V < V_SS < 2.1 V
µA 2.1 V < V_SS < 3.0 V
µA V_SS > 3.0 V
µA V_SF = 5.0 V, SF inactive
µA V_SF = 1.0 V, SF active
pF ²⁾
6.0.41 Low level
6.0.42 High level
V_{SO_L}
V_{SO_H}
0.0
–
V_DDIO-0.75 –
6.0.43 Output capacitance¹⁾ C_SO
–
–
6.0.44 Leakage current
I_SO
-2
–
1) Not subject to production test; specified by design
2) V_bias = 2 V; V_test = 20 mVpp; f = 1 MHz
0.4
V_DDIO
19
2
V
I_SO = 2 mA
V
I_SO = -2 mA
2.9 V < V_DDIO < 5.5 V
pF In tristate²⁾
μA In tristate
0 < V_SO < V_DDIO
Data Sheet
14
Rev. 1.4, 2014-10-28