70V28L20PFGI Datasheet, PDF (7/17 Pages) Integrated Device Technology – HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM

IDT70V28L
High-Speed 3.3V 64K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
Symbol
Parameter
70V28L15
Com'l Only
70V28L20
Com'l
& Ind
Min. Max. Min. Max. Unit
READ CYCLE
tRC
Read Cycle Time
tAA
Address Access Time
tACE
Chip Enable Access Time⁽³⁾
tABE
Byte Enable Access Time⁽³⁾
tAOE
Output Enable Access Time
tOH
Output Hold from Address Change
tLZ
Output Low-Z Time^(1,2)
tHZ
Output High-Z Time^(1,2)
tPU
Chip Enable to Power Up Time⁽²⁾
tPD
Chip Disab le to Power Down Time⁽²⁾
tSOP
Semapho re Flag Update Pulse (OE or SEM)
tSAA
Semaphore Address Access Time
15
____
20
____
ns
____
15
____
20
ns
____
15
____
20
ns
____
15
____
20
ns
____
10
____
12
ns
3
____
3
____
ns
3
____
3
____
ns
____
10
____
10
ns
0
____
0
____
ns
____
15
____
20
ns
10
____
10
____
ns
____
15
____
20
ns
4849 tbl 12
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage
70V28L15
Com'l Only
70V28L20
Com'l
& Ind
Symbol
Parameter
Min. Max. Min. Max. Unit
WRITE CYCLE
tWC
Write Cycle Time
15
____
20
____
ns
tEW
Chip Enable to End-of-Write⁽³⁾
12
____
15
____
ns
tAW
Address Valid to End-of-Write
12
____
15
____
ns
tAS
Address Set-up Time⁽³⁾
0
____
0
____
ns
tWP
Write Pulse Width
12
____
15
____
ns
tWR
Write Recovery Time
0
____
0
____
ns
tDW
Data Valid to End-of-Write
10
____
15
____
ns
tHZ
Output High-Z Time^(1,2)
____
10
____
10
ns
tDH
Data Hold Time⁽⁴⁾
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z^(1,2)
____
10
____
10
ns
tOW
Output Active from End-of-Write^(1,2,4)
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
ns
NOTES:
4849 tbl 13
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranted by device characterization, but is not production tested.
3. To access RAM, CE= VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and
temperature, the actual tDH will always be smaller than the actual tOW.
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