TSI350 Datasheet, PDF (114/163 Pages) Integrated Device Technology – This chapter discusses the following

114
14. Electrical Characteristics > Power Characteristics
14.3
Power Characteristics
The following table contains power characteristics for the Tsi350. The value was measured in a typical
configuration, including:
• Primary PCI Bus: 66 MHz
• Secondary PCI Bus: 66 MHz
• Primary PCI bus loading: Two
• Secondary PCI bus loading: Two.
Table 29: Power Characteristics
Symbol
Parameter
Power Consumption
P_TOTAL
Total device power
Typical
Units
Notes
1.2
W
-
14.4
Power Supply Sequencing
The Tsi350 has only one voltage domain, so no special power sequencing is required.
14.5
DC Specifications
Table 30 defines the DC parameters met by all Tsi350 signals under the conditions of the functional
operating range.
Table 30: Tsi350 DC Specifications
Symbol
Parameter
Condition
Exceptions^a Minimum Maximum Unit
V_IL
Low-level input voltage
V_IH
High-level input voltage
V_OL(5V)
V_OH
V_OH(5V)
I_IL
C_IN
Low-level output voltage
High-level output voltage
High-level output voltage
Low-level input leakage current
Input pin capacitance
-
-
-
-
-
I_OUT = 6 mA
I_OUT = -500 A
I_OUT = 2 mA
0 < V_IN < V_DD
-
-
-
P_RST_b
P_CLK
TRST_b
-
-
-
-
-
-0.5
0.5V_DD
0.6V_DD
0.6V_DD
0.6V_DD
-
0.9V_DD
2.4
-
-
0.3V_DD
V
V_DD + 0.5V
V
V_DD + 0.5V
V
V_DD + 0.5V
V
V_DD + 0.5V
V
0.55
V
-
V
-
V
10
A
10
pF
Tsi350 User Manual
January 10, 2014
Integrated Device Technology
www.idt.com