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ICS8430002 Datasheet, PDF (11/27 Pages) Integrated Device Technology – High-Performance Fractional-N Frequency Synthesizer
ICS8430002 Data Sheet
HIGH-PERFORMANCE FRACTIONAL-N FREQUENCY SYNTHESIZER
Table 5. Input Frequency Characteristics, TA = 0°C to 70°C
Symbol Parameter
Test Conditions
XTAL_IN, XTAL_OUT; NOTE 1
fIN
Input
Frequency
PCLK/nPCLK; NOTE 2
S_CLOCK
tR / tF
Rise/Fall
Time
S_CLOCK, S_DATA, S_LOAD
Minimum
12
9
Typical
Maximum
40
800
40
Units
MHz
MHz
MHz
6
ns
M = MINT + MCALC. The M value must be set for the VCO range to operate within the 490MHz - 650MHz range.
When MFRAC = 0, set bits DS1=0 and DS0 = 0
NOTE 1: Using the minimum crystal input frequency of 12MHz, valid values of M are 40.8333 ≤ M ≤ 54.1667. This means that MINT has a
range of 40 ≤ MINT ≤ 54 assuming the MFRAC is used to meet the requirement 40.8333 ≤ M ≤ 54.1667. When used, adjust MFRAC to adjust the
value of M according to the instructions on page 3. Using the maximum crystal input frequency of 40MHz, valid values of M are 12.25 ≤ M ≤
16.25. This means that MINT has a range of 12 ≤ MINT ≤ 16.25 assuming the MFRAC is used to meet the requirement 12.25 ≤ M ≤16.25. When
used, adjust MFRAC to adjust the value of M according to the instructions on page 3.
NOTE 2: Using the PCLK/nPCLK input frequency of 9MHz, when the pre-divider = 1, valid values of M are 54.4444 ≤ MINT ≤ 58. This means
that MINT has a range of 54 ≤ MINT ≤ 58 assuming the MFRAC is used to meet the requirement 54.4444 ≤ M ≤ 58. MINT must not be set higher
than 58. Using the PCLK/nPCLK input frequency of 50MHz, when the pre-divider = 1, valid values of M are 10 ≤ M ≤ 13. This means that MINT
has a range of 10 ≤ MINT ≤ 13 assuming the MFRAC is used to meet the requirement 10 ≤ M ≤ 13. MINT must not be set lower than 10.
Table 6. Crystal Characteristics
Parameter
Mode of Oscillation
Frequency
Equivalent Series Resistance (ESR)
Shunt Capacitance
Test Conditions
Minimum Typical Maximum
Fundamental
12
40
50
7
Units
MHz
Ω
pF
ICS8430002AY REVISION C NOVEMBER 12, 2009
11
©2009 Integrated Device Technology, Inc.