HY57V281620ET Datasheet, PDF (7/13 Pages) Hynix Semiconductor – 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

Synchronous DRAM Memory 128Mbit (8Mx16bit)
HY57V281620E(L)T(P) Series
ABSOLUTE MAXIMUM RATING
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature / Time
Symbol
TA
TSTG
VIN, VOUT
VDD, VDDQ
IOS
PD
TSOLDER
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260 / 10
Unit
o_C
o_C
V
V
mA
W
o_{C / Sec}
DC OPERATING CONDITION (TA= 0 to 70^oC)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
VDD, VDDQ
VIH
VIL
Min.
3.0
2.0
-0.3
Typ
Max
Unit
Note
3.3
3.6
V
1
3.0
VDDQ + 0.3
V
1, 2
-
0.8
V
1, 3
Note: 1. All voltages are referenced to VSS = 0V
2. VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3. VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration
AC OPERATING TEST CONDITION (TA= 0 to 70 ^oC, VDD=3.3±0.3V, VSS=0V)
Parameter
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Symbol
VIH / VIL
Vtrip
tR / tF
Voutref
CL
Value
2.4 / 0.4
1.4
1
1.4
50
Unit
V
V
ns
V
pF
Note
1
Note 1.
Vtt = 1.4V
Vtt = 1.4V
Output
RT = 500 Ω
Output
50pF
Z0 = 50Ω
RT = 50Ω
50pF
DC Output Load Circuit
AC Output Load Circuit
Rev. 1.1 / Jan. 2005
7