HY57V281620ET Datasheet, PDF (1/13 Pages) Hynix Semiconductor – 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Document Title
4Bank x 2M x 16bits Synchronous DRAM
Revision History
Revision No.
History
1.0
First Version Release
1.1
1. Corrected PIN ASSIGNMENT A12 to NC
Draft Date
Dec. 2004
Jan. 2005
Remark
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 1.1 / Jan. 2005
1