HY57V281620ET Datasheet, PDF (12/13 Pages) Hynix Semiconductor – 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

Synchronous DRAM Memory 128Mbit (8Mx16bit)
HY57V281620E(L)T(P) Series
COMMAND TRUTH TABLE
Command
CKEn-1 CKEn CS RAS CAS WE DQM ADDR A10/AP BA Note
Mode Register Set
H
X
L
L
L
L
X
OP code
H
X
X
X
No Operation
H
X
X
X
L
H
H
H
Bank Active
H
X
L
L
H
H
X
RA
V
Read
L
H
X
L
H
L
H
X
CA
V
Read with Autoprecharge
H
Write
L
H
X
L
H
L
L
X
CA
V
Write with Autoprecharge
H
Precharge All Banks
H
Precharge selected Bank
X
L
L
H
L
X
X
H
X
L
V
Burst Stop
H
X
L
H
H
L
X
X
DQM
H
X
V
X
Auto Refresh
H
H
L
L
L
H
X
X
Burst-Read-Single-WRITE
H
X
L
L
L
L
X
A9 ball High
(Other balls OP code)
MRS
Mode
Entry
H
L
L
L
L
H
X
Self Refresh¹
H
X
X
X
X
Exit
L
H
X
L
H
H
H
H
X
X
X
Entry
H
L
X
Precharge
power down
L
H
H
H
X
H
X
X
X
Exit
L
H
X
L
H
H
H
H
X
X
X
Clock
Suspend
Entry
H
L
X
L
V
V
V
X
Exit
L
H
X
X
Rev. 1.1 / Jan. 2005
12