HY64UD16162M Datasheet, PDF (5/11 Pages) Hynix Semiconductor – 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM

HY64UD16162M Series
AC CHARACTERISTICS
Vdd=2.7V~3.3V, TA = -25°C to 85°C(E) / -40°C to 85°C(I), unless otherwise specified
# Symbol
Parameter
-70
Min. Max.
-85
Min. Max.
Unit
Read Cycle
1
tRC Read Cycle Time
70
-
85
-
ns
2
tAA Address Access Time
-
70
-
85 ns
3
tACS Chip Select Access Time
-
70
-
85 ns
4
tOE Output Enable to Output Valid
-
20
-
20 ns
5
tBA /LB, /UB Access Time
-
70
-
85 ns
6
tCLZ Chip Select to Output in Low Z
10
-
10
-
ns
7
tOLZ Output Enable to Output in Low Z
5
-
5
-
ns
8
tBLZ /LB, /UB Enable to Output in Low Z
10
-
10
-
ns
9
tCHZ Chip Disable to Output in High Z
0
20
0
30 ns
10 tOHZ Out Disable to Output in High Z
0
20
0
30 ns
11 tBHZ /LB, /UB Disable to Output in High Z
0
20
0
30 ns
12
tOH Output Hold from Address Change
10
-
10
-
ns
Write Cycle
13
tWC Write Cycle Time
70
-
85
-
ns
14
tCW Chip Selection to End of Write
60
-
70
-
ns
15
tAW Address Valid to End of Write
60
-
70
-
ns
16
tBW /LB, /UB Valid to End of Write
60
-
70
-
ns
17
tAS Address Set-up Time
0
-
0
-
ns
18
tWP Write Pulse Width
50
-
60
-
ns
19
tWR Write Recovery Time
0
-
0
-
ns
20 tWHZ Write to Output in High Z
0
20
0
30 ns
21
tDW Data to Write Time Overlap
30
-
30
-
ns
22
tDH Data Hold from Write Time
0
-
0
-
ns
23
tOW Output Active from End of Write
5
-
5
-
ns
AC TEST CONDITIONS
TA = -25°C to 85°C(E) / -40°C to 85°C(I), unless otherwise specified
Parameter
Value
Input Pulse Level
0.4V to 2.2V
Input Rising and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
See Below
AC TEST LOADS
D_OUT
Z0=50 Ohm
RL=50 Ohm
CL¹ =30 pF
VL=1.5 V
Note
1. Including jig and scope capacitance.
Revision 1.7
5
March. 2002