HY64UD16162M Datasheet, PDF (4/11 Pages) Hynix Semiconductor – 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM

HY64UD16162M Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Vdd
VSS
VIH
VIL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
2.7
0
2.2
-0.3¹
Note 1. VIL=-1.5V for pulse width less than 10ns
Undershoot is sampled, not 100% tested.
Typ.
3.0
-
-
-
Max. Unit
3.3
V
0
V
Vdd+0.3 V
0.6
V
DC ELECTRICAL CHARACTERISTICS
Vdd=2.7V~3.3V, TA= -25°C to 85°C(E) / -40°C to 85°C(I)
Sym.
Parameter
Test Condition
ILI Input Leakage Current
VSS≤VIN≤Vdd
VSS≤VOUT≤Vdd,
ILO Output Leakage Current
/CS1=VIH, CS2=VIH,
/OE=VIH or /WE=VIL
/CS1=VIL, CS2=VIH,
ICC Operating Power Supply Current _{VIN=VIH or VIL, II/O=0mA}
ICC1
Average Operating Current
ICC2
ISB
ISB1
IDPD
VOL
VOH
TTL Standby Current
Standby Current(CMOS Input)
Deep Power Down Curent
Output Low Voltage
Output High Voltage
/CS1≤ 0.2V, CS2 ≥Vdd-0.2V,
VIN ≤0.2V or VIN≥Vdd-0.2V,
Cycle Time=1µs.
100% Duty, II/O=0mA
/CS1=VIL, CS2=VIH,
VIN=VIH or VIL, Cycle Time=Min.
100% Duty, II/O=0mA
70ns
85ns
/CS1,CS2=VIH or /UB,/LB= VIH
/CS1, CS2≥Vdd-0.2V
70ns
or /UB,/LB ≥Vdd-0.2V
85ns
CS2≤VSS+0.2V
IOL=2.1mA
IOH=-1.0mA
Min. Typ. Max. Unit
-1 - 1 µA
-1 - 1 µA
-
-
3 mA
-
-
5 mA
-
- 25 mA
-
- 20 mA
-
- 0.5 mA
-
- 85 µA
-
- 75 µA
-
-
2 µA
-
- 0.4 V
2.4 -
-V
CAPACITANCE
(Temp = 25°C, f=1.0MHz)
Symbol
Parameter
CIN
Input Capacitance(Add, /CS1, CS2, /WE, /OE, /UB, /LB)
COUT Output Capacitance(I/O)
Note : These parameters are sampled and not 100% tested
Condition
VIN=0V
VI/O=0V
Max. Unit
8 pF
10 pF
Revision 1.7
4
March. 2002