HY64UD16162M Datasheet, PDF (3/11 Pages) Hynix Semiconductor – 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM

HY64UD16162M Series
ORDERING INFORMATION
Part Number
HY64UD16162M-E
HY64UD16162M-I
Speed
70 / 85
70 / 85
Note
1. E : Extended Temp. (-25°C ~ 85°C)
2. I : Industrial Temp. (-40°C ~ 85°C)
Power
LL-Part
LL-Part
Temperature
E¹
I²
Package
FBGA
FBGA
ABSOLUTE MAXIMUM RATINGS ¹
Symbol
VIN,VOUT
Vdd
TA
TSTG
PD
TSOLDER
Parameter
Input/Output Voltage
Power Supply
Ambient Temperature
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
Rating
-0.3 to Vdd+0.3
-0.3 to 3.6
-25 to 85
-40 to 85
-55 to 150
1.0
260• 10
Unit
V
V
°C
°C
°C
W
°C• sec
Remark
HY64UD16162M-E
HY64UD16162M-I
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied. Exposure
to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS1 CS2 /WE /OE /LB /UB
Mode
I/O Pin
I/O1~I/O8 I/O9~I/O16
Power
H H X X X X Deselected
High-Z
High-Z
Standby
X L X X X X Deselected
High-Z
High-Z Deep Power Down
X H X X H H Deselected
High-Z
High-Z
Standby
LHLXLH
Write
DIN
High-Z
Active
LHHL LH
Read
DOUT
High-Z
Active
L H H H L H Output Disabled High-Z
High-Z
Active
L HL XHL
Write
High-Z
DIN
Active
L HH L H L
Read
High-Z
DOUT
Active
L H H H H L Output Disabled High-Z
High-Z
Active
LHLXL L
Write
DIN
DIN
Active
LHHL L L
Read
DOUT
DOUT
Active
L H H H L L Output Disabled High-Z
High-Z
Active
Note
1. H=VIH, L=VIL, X=don’ t care(VIL or VIH)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O1 - I/O8.
When /UB is LOW, data is written or read to the upper byte, I/O9 - I/O16.
Revision 1.7
3
March. 2002