HMT112V7AFP8C-G7 Datasheet, PDF (5/25 Pages) Hynix Semiconductor – 240pin DDR3 SDRAM VLP Registered DIMM

1.2 Speed Grade & Key Parameters
MT/S
Grade
tCK (min)
CAS Latency
tRCD (min)
tRP (min)
tRAS (min)
tRC (min)
CL-tRCD-tRP
DDR3-1066
-G7
1.875
7
13.125
13.125
37.5
50.625
7-7-7
DDR3-1333
-H9
1.5
9
13.5
13.5
36
49.5
9-9-9
1.3 Address Table
Organization
Refresh Method
Row Address
Column Address
Bank Address
Page Size
# of Rank
# of Device
1GB(1Rx8)
128M x 72
8K/64ms
A0-A13
A0-A9
BA0-BA2
1KB
1
9
2GB(2Rx8)
256M x 72
8K/64ms
A0-A13
A0-A9
BA0-BA2
1KB
2
18
2GB(1Rx4)
256M x 72
8K/64ms
A0-A13
A0-A9,A11
BA0-BA2
1KB
1
18
Unit
ns
tCK
ns
ns
ns
ns
tCK
4GB(2Rx4)
512M x 72
8K/64ms
A0-A13
A0-A9,A11
BA0-BA2
1KB
2
36
Rev. 0.2 / December 2008
5