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HMT112V7AFP8C-G7 Datasheet, PDF (4/25 Pages) Hynix Semiconductor – 240pin DDR3 SDRAM VLP Registered DIMM
1. Description

This Hynix DDR3 VLP (Very Low Profile) registered Dual In-Line Memory Module (DIMM) series consists of 1Gb A gen-
eration. These are intended for use as main memory in server and workstation systems, providing a high performance
8 byte interface in 133.35mm width form factor of industry standard. It is suitable for easy interchange and addition.
1.1 Device Features & Ordering Information
1.1.1 Features
• VDD=VDDQ=1.5V
• VDDSPD=3.3V to 3.6V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and /DQS transition with
CK transition
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data, data
strobes and data masks latched on the rising edges of
the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, and (11)
supported
• Programmable additive latency 0, CL-1, and CL-2 sup
ported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• 8banks
• 8K refresh cycles /64ms
• DDR3 SDRAM Package: JEDEC standard 78ball
FBGA(x4/x8), 96ball FBGA(x16) with support balls
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• Auto Self Refresh supported
• 8 bit pre-fetch
• Heat Spreader installed for 4GB
• SPD with Integrated TS of Class B
1.1.2 Ordering Information
Part Name
HMT112V7AFP8C-G7/H9
HMT125V7AFP8C-G7/H9
HMT125V7AFP4C-G7/H9
HMT351V7AMP4C-G7/H9
Density
Organization
# of
DRAMs
# of
ranks
Materials
FDHS
1GB
128Mx72
9
1
Lead free
X
2GB
256Mx72
18
2
Lead free
X
2GB
256Mx72
18
1
Lead free
X
4GB
512Mx72
36
2
Lead free
O
*Please Contact local sales administrator for more details of part number
Rev. 0.2 / December 2008
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