HMT112V7AFP8C-G7 Datasheet, PDF (18/25 Pages) Hynix Semiconductor – 240pin DDR3 SDRAM VLP Registered DIMM

4. Pin Capacitance (VDD=1.5V, VDDQ=1.5V)
1GB: HMT112V7AFP8C
Pin
Symbol
Min
Max
CK0, CK0
CKE, ODT
CS
Address, RAS, CAS, WE
DQ, DM, DQS, DQS
CCK
TBD
TBD
CI1
TBD
TBD
CI2
TBD
TBD
CI3
TBD
TBD
CIO
TBD
TBD
2GB: HMT125V7AFP8C
Pin
CK0, CK0
CKE, ODT
CS
Address, RAS, CAS, WE
DQ, DM, DQS, DQS
Symbol
Min
Max
CCK
CI1
CI2
CI3
CIO
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
2GB: HMT125V7AFP4C
Pin
CK0, CK0
CKE, ODT
CS
Address, RAS, CAS, WE
DQ, DM, DQS, DQS
Symbol
Min
Max
CCK
CI1
CI2
CI3
CIO
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
4GB: HMT351V7AMP4C
Pin
CK0, CK0
CKE, ODT
CS
Address, RAS, CAS, WE
DQ, DM, DQS, DQS
Symbol
Min
Max
CCK
CI1
CI2
CI3
CIO
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Note:
1. Pins not under test are tied to GND.
2. These value are guaranteed by design and tested on a sample basis only.
Rev. 0.2 / December 2008
Unit
pF
pF
pF
pF
pF
Unit
pF
pF
pF
pF
pF
Unit
pF
pF
pF
pF
pF
Unit
pF
pF
pF
pF
pF
18