HY27UH08AG5M Datasheet, PDF (49/49 Pages) Hynix Semiconductor – 16Gbit (2Gx8bit) NAND Flash

MARKING INFORMATION - TSOP1
Packag
HY27UH08AG(5/D)M Series
16Gbit (2Gx8bit) NAND Flash
M arking Exam ple
TSOP1
K
O
R
H
Y
2
7
x
H
x
x
A
G
x
M
x
x
x
x
Y WW
x
x
- hynix
- KOR
- HY27xHxxAG2M xxxx
HY: HYNIX
27: NAND Flash
x: Pow er Supply
H : Classification
xx: Bit O rganization
AG : D ensity
x: Mode
M : Version
: Hynix Sym bol
: O rigin Country
: Part Num ber
: U(2.7V~3.6V)
: Single Level Cell+ Q uadruple D ie+ Large Block
: 08(x8)
: 16Gbit
: 5(2nCE & 2R/nB; Sequential Row Read Disable)
: D(Dual interface; Sequential Row Read Disable)
: 1st Generation
x: Package Type
: T(48-TSOP1), M(52-TLGA)
x: Package M aterial
: Blank(N orm al), P(Lead Free)
x: O perating Tem perature
: C(0℃ ~70℃ ), E(-25℃ ~85℃ )
x: Bad Block
M(-30℃ ~85℃ ), I(-40℃ ~85℃ )
: B(Included Bad Block), S(1~ 5 Bad Block),
P(All G ood Block)
- Y: Year (ex: 5=year 2005, 06= year 2006)
- w w : W ork W eek (ex: 12= work week 12)
- xx: Process Code
N o te
- Capital Letter
- Sm all Letter
: Fixed Item
: N on-fixed Item
Rev. 0.6 / Dec. 2006