HY27UH08AG5M Datasheet, PDF (22/49 Pages) Hynix Semiconductor – 16Gbit (2Gx8bit) NAND Flash

HY27UH08AG(5/D)M Series
16Gbit (2Gx8bit) NAND Flash
Item
Input / Output
Capacitance
Input Capacitance
Symbol
Test
Condition
Min
Max
HY27UH08AG5M-T(P) HY27UH08AGDM-UP
Unit
CI/O
VIL=0V
-
20
15
pF
CIN
VIN=0V
-
20
15
pF
Table 10: Pin Capacitance (TA=25C, F=1.0MHz)
Parameter
Symbol
Program Time
tPROG
Dummy Busy Time for Cache Program
tCBSY
Dummy Busy Time for Cache Read
tRBSY
Main Array
NOP
Number of partial Program Cycles in the same page
Spare Array
NOP
Block Erase Time
tBERS
Table 11: Program / Erase Characteristics
Min Typ Max Unit
- 200 700 us
-
3 700 us
-
5
-
us
-
-
4 Cycles
-
-
4 Cycles
-
2
3
ms
Rev. 0.6 / Dec. 2006