HY27UH08AG5M Datasheet, PDF (4/49 Pages) Hynix Semiconductor – 16Gbit (2Gx8bit) NAND Flash

HY27UH08AG(5/D)M Series
16Gbit (2Gx8bit) NAND Flash
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
NAND INTERFACE
- x8 width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
SUPPLY VOLTAGE
- 3.3V device: VCC = 2.7 to 3.6V
: HY27UH08AG(5/D)M
Memory Cell Array
= (2K+ 64) Bytes x 64 Pages x 16,384 Blocks
PAGE SIZE
- x8 device : (2K + 64 spare) Bytes
: HY27UH08AG(5/D)M
BLOCK SIZE
- x8 device: (128K + 4K spare) Bytes
PAGE READ / PROGRAM
- Random access: 25us (max.)
- Sequential access: 30ns (min.)
- Page program time: 200us (typ.)
STATUS REGISTER
ELECTRONIC SIGNATURE
- 1st cycle: Manufacturer Code
- 2nd cycle: Device Code.
CHIP ENABLE DON'T CARE
- Simple interface with microcontroller
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions
DATA INTEGRITY
- 100,000 Program/Erase cycles (with 1bit/512byte ECC)
- 10 years Data Retention
PACKAGE
- HY27UH08AG5M-T(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27UH08AG5M-T (Lead)
- HY27UH08AG5M-TP (Lead Free)
- HY27UH08AGDM-MP
: 52-TLGA (12 x 17 x 1.0 mm)
- HY27UH08AGDM-MP (Lead Free)
COPY BACK PROGRAM MODE
- Fast page copy without external buffering
CACHE PROGRAM MODE
- Internal Cache Register to improve the program
throughput
FAST BLOCK ERASE
- Block erase time: 2ms (Typ.)
Rev. 0.6 / Dec. 2006